Theory of source-drain partitioning in MOSFET

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The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high frequency advanced compact models for MOSFET devices. Recently it has been shown that WD partitioning fails for field dependent mobility or for laterally asymmetrical doping. This work is aimed at presenting a generalization of the partitioning concept.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 609 - 612
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4