Horio K.
Shibaura Institute of Technology, JP
Keywords: AlGaN/GaN HEMT, current slump, deep level, device simulation
Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current collapse is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 695 - 698
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4