Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the [...]
As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]
MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]
, Hosokawa S.
, Navarro D.
, Matsumoto S.
, Ueno H.
, Mattausch H.J.
, Miura-Mattausch M.
, Ohguro T.
, Iizuka T.
, Taguchi M.
, Kage T.
, Miyamoto S.
, Hiroshima University, JP
Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is [...]
, He J.
, Heyderi B.
, Dunga M.
, Lin C.H.
, Heyderi B.
, Wan H.
, Chan M.
, Niknejad A.M.
, Hu C.
, University of California at Berkeley, US
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]
This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]
Ever increasing circuit density, operating speed, faster on-chip rise times, use of low resistance Copper (Cu) interconnects, and longer wire lengths due to high level of integration in VLSI chip designs, have necessitated the need [...]
This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]
In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with [...]
A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated [...]
An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]
, Man T.Y.
, He J.
, Xi X.
, Lin C.H.
, Lin X.
, Lin C.H.
, Lin X.
, Ko P.K.
, Niknejad A.M.
, Hu C.
, Hong Kong University of Science and Technology, HK
This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]
Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]
This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]
A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poissons equation to solve for electron concentration directly rather than [...]
An exact analytic model for undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the mobile charge density in the 1-D Poissons equation. The formulation starts with deriving a close [...]
The linear cofactor difference extrema of metal-oxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are [...]
Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]
Statistical modeling in the design of todays high performance integrated circuits (ICs) is a necessity to produce competitive products with short development time. The use of backward propagation of variance (BPV) has proven its worth [...]
The characteristics of tapered inductors and standard inductors have been compared, and an improved compact model for tapered inductors is presented. The measured data of spiral inductors shows that the tapered inductor has higher quality [...]
Double-gate field-effect transistors are promising device structures which have excellent scalability. To evaluate merits of DG MODFETs, we developed a compact four-terminal DG MOSFET model by adopting the double charge-sheet model. In this presentation, we [...]
A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]
An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main [...]
This paper presents a unified threshold-voltage-based (Vt-based) MOSFET model, which maintains source¡Vdrain symmetry and allows accurate prediction of transconductance (gm) and drain conductance (gds) and their derivatives (gm' and gds') with smooth transitions across regions [...]
Interest in nanotechnology has grown explosively in recent years because of the potential to beneficially impact almost every aspect of our lives. In the future, we can expect technologies that exploit unique nanometer scale phenomena [...]
A simple and effective compact model methodology that predicts the history effect in silicon-on-insulator (SOI) is discussed. In this study we employ three physical parameters to modify the body-potentials of SOI FETs in an inverter [...]
Acceptance of a model requires its availability in main-stream simulators, yet it can be difficult to get a new model into commercial simulators. In this paper we present simulation results using a compiled Verilog-A architecture [...]
This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, [...]
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling