## Papers:

### Technology Limits and Compact Model for SiGe Scaled FETs

Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the [...]

### Recent Enhancements of MOS Model 11

MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]

### Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Miura-Mattausch M., Hosokawa S., Navarro D., Matsumoto S., Ueno H., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kage T., Miyamoto S.,

*Hiroshima University, JP*Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is [...]

### The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C.,

*University of California at Berkeley, US*This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]

### Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S.,

*Nanyang Technological University, SG*This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

### Modeling and Characterization of Wire Inductance for High Speed VLSI Design

Ever increasing circuit density, operating speed, faster on-chip rise times, use of low resistance Copper (Cu) interconnects, and longer wire lengths due to high level of integration in VLSI chip designs, have necessitated the need [...]

### R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]

### Advanced MOSFET Modeling for RF IC Design

In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with [...]

### RF Noise Models of MOSFETs- A Review

A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated [...]

### Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

### Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C.,

*Hong Kong University of Science and Technology, HK*This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

### Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

### Floating Gate Devices: Operation and Compact Modeling

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

### A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach

A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poissons equation to solve for electron concentration directly rather than [...]

### An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

An exact analytic model for undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the mobile charge density in the 1-D Poissons equation. The formulation starts with deriving a close [...]

### Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction

The linear cofactor difference extrema of metal-oxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are [...]

### Extraction of Extrinsic Series Resistance in RF CMOS

An analytical approach for parameter extraction for CMOS incorporating substrate effect has been presented. The method is based on small-signal equivalent circuit valid in all region of operation, which uniquely extract extrinsic resistances used to [...]

### Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices

Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]

### On the Correlations Between Model Process Parameters in Statistical Modeling

Statistical modeling in the design of todays high performance integrated circuits (ICs) is a necessity to produce competitive products with short development time. The use of backward propagation of variance (BPV) has proven its worth [...]

### A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology

This paper reports HiSIM-1.2 Spice model parameter extraction for a practical 90 nm technology devices. The extraction sequence with the measurement data will be exhibitted. The number of optimized HiSIM parameters were only 19 out [...]

### A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

Wang S.C., Huang G.W., Chen K.M., Peng A.S., Tseng H.C., Hsu T.L.,

*National Nano Device Laboratories, TW*In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed [...]

### Characterization and Modeling of Silicon Tapered Inductors

Peng A.S., Chen H.Y., Chen K.M., Huang G.W., Wang S.C., Chen H.Y., Chen K.M., Chang C.Y.,

*National Nano Device Laboratories, TW*The characteristics of tapered inductors and standard inductors have been compared, and an improved compact model for tapered inductors is presented. The measured data of spiral inductors shows that the tapered inductor has higher quality [...]

### Improved Compact Model for Four-Terminal DG MOSFETs

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H.,

*National Institute of Advanced Industrial Science and Technology, JP*Double-gate field-effect transistors are promising device structures which have excellent scalability. To evaluate merits of DG MODFETs, we developed a compact four-terminal DG MOSFET model by adopting the double charge-sheet model. In this presentation, we [...]

### Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

### Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions

The first successful automatic extraction of BSIM3/4 model parameters based on numerical optimization of a functional, which includes penalty functions, is reported. The penalty functions always keep the values of the model parameters within a [...]

### An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs

An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main [...]

### Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

Chiah S.B., Zhou X., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S.,

*Nanyang Technology University, SG*This paper presents a unified threshold-voltage-based (Vt-based) MOSFET model, which maintains source¡Vdrain symmetry and allows accurate prediction of transconductance (gm) and drain conductance (gds) and their derivatives (gm' and gds') with smooth transitions across regions [...]

### Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs

Interest in nanotechnology has grown explosively in recent years because of the potential to beneficially impact almost every aspect of our lives. In the future, we can expect technologies that exploit unique nanometer scale phenomena [...]

### Predicting the SOI History Effect Using Compact Models

A simple and effective compact model methodology that predicts the history effect in silicon-on-insulator (SOI) is discussed. In this study we employ three physical parameters to modify the body-potentials of SOI FETs in an inverter [...]

### New Capabilities for Verilog-A Implementations of Compact Device Models

Mierzwinski M., OHalloran P., Troyanovsky B., Mayaram K., Dutton R.W.,

*Tiburon Design Automation, US*Acceptance of a model requires its availability in main-stream simulators, yet it can be difficult to get a new model into commercial simulators. In this paper we present simulation results using a compiled Verilog-A architecture [...]

### Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, [...]

Journal: TechConnect Briefs

Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Published: March 7, 2004

Industry sector: Sensors, MEMS, Electronics

Topic: Compact Modeling

ISBN: 0-9728422-8-4