Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

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This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C -V data, and inclusion of polydepletion effect for both DC and AC models.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 74 - 79
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9728422-8-4