Extraction of Extrinsic Series Resistance in RF CMOS


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An analytical approach for parameter extraction for CMOS incorporating substrate effect has been presented. The method is based on small-signal equivalent circuit valid in all region of operation, which uniquely extract extrinsic resistances used to extend the industry standard BSIM3v3 MOSFET model for RF applications. The verification of the model was carried out through the measurements of S-parameters and direct time-domain output voltage for a single device at 2.4 GHz in non-linear mode of operation. A circuit level evaluation of the model was carried out using 0.18mm CMOS amplifier and good results for power gain has been achieved.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 136 - 139
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-8-4