A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

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In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed to accurately determine the whole model parameters. The agreement between the measured and simulated S-parameters up to 40GHz proves the feasibility of this modified extraction method.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 151 - 154
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9728422-8-4