Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is determined only by the I-V characteristics even for short-channelMOSFETs. Good agreement with measurements is the justification of the model implemented in HiSIM, the circuit simulation model based on a full surface-potential description. The thermal drain-noise coefficient of short-channel MOSFETs increases from 2/3 under the saturation condition. The origin is explained by the potential increase along the channel.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 66 - 69
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling