A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated in short channel MOSFETs has made researchers revisit the problem to develop better models, especially in recent years. In this review, a detailed discussion of the most recent models published in the literature is provided. Each model is investigated in terms of physical and analytical aspects of the model, and some comments are made in each case. The induced gate noise, which is important in today’s high frequency applications, is also briefly reviewed at the end of this paper.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 96 - 101
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling