Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

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This paper presents a unified threshold-voltage-based (Vt-based) MOSFET model, which maintains source¡Vdrain symmetry and allows accurate prediction of transconductance (gm) and drain conductance (gds) and their derivatives (gm’ and gds’) with smooth transitions across regions of operation. This has been achieved based on our previous unified source-referenced Vt model [1] but re-derived with bulk reference for the drain current (Ids). A consistent and symmetric charge model is also derived for MOSFET intrinsic capacitances. It has been verified with the experimental data from a 0.18-ƒ_m CMOS shallow trench isolation (STI) technology wafer

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 175 - 178
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-8-4