Lim K.Y. – TechConnect Briefs

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Zhou X., Chiah S.B., Lim K.Y., Nanyang Technological University, SG

This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), [...]

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

Chiah S.B., Zhou X., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technology University, SG

This paper presents a unified threshold-voltage-based (Vt-based) MOSFET model, which maintains source¡Vdrain symmetry and allows accurate prediction of transconductance (gm) and drain conductance (gds) and their derivatives (gm' and gds') with smooth transitions across regions [...]

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

Chiah S.B., Zhou X., Lim K.Y., Nanyang Technological University, SG

The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including [...]

Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

Chiah S.B., Zhou X., Lim K.Y., Nanyang Technological University, SG

The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) [...]

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Zhou X., Chiah S.B., Lim K.Y., Nanyang Technological University, SG

This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), [...]

Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction

Chiah S.B., Zhou X., Lim K.Y., See A., Chan L., Nanyang Technological University, SG

This paper demonstrates a physically-based approach to parameter extraction of the compact Ids model we have developed for deep-submicron technology development. A two-iteration parameter-extraction scheme is described, which improves the previous one-iteration approach. Parameter calibration [...]

Compact Model for Manufacturing Design and Fluctuation Study

Lim K.Y., Zhou X., Chartered Semiconductor Manufacturing Ltd., SG

In this article, a physics based compact model [1, 2] has been used as a tool for manufacturing process variability study. Three critical end-of-line (EOL) measured electrical testing (ET) parameters, namely Vth, Ion and Ioff, [...]

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]