In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with comparisons of the data for both y parameter and fT characteristics. The high frequency (HF) noise and distortion modeling issues are also discussed by showing the validation results against measured data. The developed RF MOSFET model can be the basis of a predictive and statistical modeling approach for RF applications.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 90 - 95
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling