Motorola – TechConnect Briefs

BJT Modeling with VBIC, Basics and V1.3 Updates

McAndrew C., Bettinger T., Lemaitre L., Tutt M., Motorola, US

This paper reviews the VBIC BJT model, and details updates in the version 1.3 release. VBICv1.3 includes explicit interaction with siulator global parameters gmin and pnjmaxi, explicit limiting of local temperature rise and exponential arguments [...]

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

McAndrew C., Motorola, US

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

McAndrew C., Motorola, US

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]

Electrical Potential Distribution in Nanopores

Gillespie A.R., Paul R., Paddison S.J., Motorola, US

The study of the transport of ionic species through nanopores is a subject of wide interest covering several diverse fields such as biophysics, electrochemistry and polymer science. While, during recent decades, considerable advances have been [...]

Standardization of Compact Device moding in High Level Description Language

Lemaitre L., McAndrew C., Grabinski W., Motorola, CH

This paper proposes a methodology based on hardware description languages (HDL) to efficiently develop compact device models. After an introduction to compact device modeling we describe Verilog-AMS, a popular HDL. Then we show how Verilog-AMS [...]

BJT Modeling with VBIC, Basics and V1.3 Updates

McAndrew C., Bettinger T., Lemaitre L., Tutt M., Motorola, US

This paper reviews the VBIC BJT model, and details updates in the version 1.3 release. VBICv1.3 includes explicit interaction with siulator global parameters gmin and pnjmaxi, explicit limiting of local temperature rise and exponential arguments [...]

Molecular Electronics: The Experimentalist’s View

Tsui R., Motorola, US

In the last few years, significant experimental advances have been achieved in the utilization of nanoscale molecular components for electronic applications. A variety of materials, including carbon nanotubes, custom-synthesized organic molecules, metallic nanoparticles, and biological [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Unified Statistical Modeling for Circuit Simulation

McAndrew C., Drennan P.G., Motorola, US

Accurate statistical simulation and modeling are important for IC design. Different types of statistical simulation require different types of statistical models. In this paper a unified approach to statistical modeling and characterization is presented. Based [...]