The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

, , , , , , , , ,
,

Keywords: , , ,

This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

PDF of paper:


Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 70 - 73
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9728422-8-4