MOS Structures Containing Amorphous Silicon Nanoparticles for Application in Memory Devices

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Metal-Oxide-Silicon structures containing a layer with amorphous silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiOx (x=1.15) and RF sputtering of SiO2 on n-type crystalline silicon, followed by [...]

Journal: TechConnect Briefs
Volume: 4, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
Published: May 20, 2007
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 1-4200-6376-6