Resolution Enhancement Technologies (RETs) are widely used to cope with the severe optical effects that are manifests in sub-wavelength lithography. Inverse Lithography Technique (ILT) has recently been proposed [1-3] as an effective RET for sub wavelength technology. ILT increases the degree-of-freedom in mask data manipulation, and allows automatic correction to 2D pattern distortion. In this work, a realistic aerial image model with an efficient optimization scheme is developed to pattern metal layers for the 65nm technology node. Simulation results show the optimized mask provide good fidelity in patterning. We called our method discrete reticle technique, DIRECT.
Journal: TechConnect Briefs
Volume: 4, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
Published: May 20, 2007
Pages: 430 - 433
Industry sector: Advanced Materials & Manufacturing
Topicss: Advanced Manufacturing, Nanoelectronics