Quantum dot single electron transistor (QD SET) can be fabricated using e-beam nanolithography (EBL) and then continued by combination process of pattern dependent oxidation (PADOX) and high density plasma etching. EBL was used to pattern the whole masks of SET fabrication which consist of mask for doped area separator and the others were each for formation: source-quantum dot-drain, poly-Si gate, point contact and metal pad. All of masks were designed using GDSII Editor software offline and then exposed using EBL integrated by scanning electron microscopy (SEM). In this paper, the whole designs of SET masks which are successively patterned are demonstrated and their nanostructures characterizations using SEM and atomic force microscopy (AFM) are reported. We found shape and dimension biases of schematics and SEM images of masks in which these were caused by proximity effect. Therefore, in the designing step of SET masks, proximity effect, used resist and EBL equipment resolutions were considered.
Journal: TechConnect Briefs
Volume: 4, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
Published: May 20, 2007
Pages: 434 - 437
Industry sector: Advanced Materials & Manufacturing
Topicss: Advanced Manufacturing, Nanoelectronics