Densification and Grain Growth During the Sintering of Nanoscale SiC

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Numerous routes have been developed recently for the synthesis of a broad range of ceramic and metal nanoparticles. However, applications for these new materials have lagged behind owing to a limited understanding of processing methods that can convert these materials to multiscale architectures with useful properties. This paper presents the evolution of density, grain growth and properties during the sintering of nanoscale silicon carbide using plasma pressure compaction. The time, temperature and pressure inter-relationships on densification, microstructure and properties will be explored using the integral work of sintering concepts based on the master sintering curve analysis. The combined experimental and modeling approaches will help in reducing the trial-and-error that is currently required to determine the optimum sintering cycles and properties in nanostructured materials.

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Journal: TechConnect Briefs
Volume: 4, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
Published: May 20, 2007
Pages: 494 - 497
Industry sector: Advanced Materials & Manufacturing
Topicss: Advanced Manufacturing, Nanoelectronics
ISBN: 1-4200-6376-6