WCM – Compact Modeling


Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect

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Gate-All-Around metal-oxide-semiconductor field effect transistors (GAA-MOSFETs) have been attracting ever-increasing attention. The numerical calculations including quantum mechanical effect and ballistic transport of drain current can be evaluated quite accurately. However, it takes an immense amount [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

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A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-1-4822-5827-1