Charges in gate dielectric significantly degraded the p-MOSFET device performances particularly due to NBTI phenomenon. The validation of NBTI effects on device and circuit performance require accurate model to ensure reliable prediction during design phase. Previous works in simulation-based study in assessing the degradation level of p-MOSFET devices – and circuits ,  specifically on NBTI reliability issues rely on R-D model. However, the R-D model neglect the existence of hole trapping effect in pre-existing bulk oxide traps and switching oxide trap which found under fast pulse measurement method , . To account for the contribution of hole trapping effect, a simulation study based on two-stage model is developed –. The simulation based study utilized this model had been conducted by  based on trap energy level defined in , . However, experimental work found that each defects are distributed below the valence band edge, within energy band gap and above conduction band edge for the as-grown hole traps, created defects and antineutralization positive charges respectively . In this paper, we investigate and validated the density of states for each trap specifically defined below, within and beyond energy band gap using Sentaurus TCAD simulator.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 467 - 470
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling