Khandelwal S. – TechConnect Briefs

ASM-HEMT: Industry Standard GaN HEMT Model for Power and RF Applications

Ahsan S.A., Chauhan Y.S., Dangi R., Ghosh S., Khandelwal S., Pampori A., IIT Kanpur, IN

HEMTs based on GaN have become immensely ubiquitous in the past decade and offer a strong competition to mature technologies like silicon primarily due to the superior characteristics offered by the GaN material system over [...]

Modeling Independent Multi-Gate MOSFET

Chang H-L, Chauhan Y.S., Duarte J.P., Hu C., Khandelwal S., University of California-Berkeley, US

In this paper a fully-featured turn-key compact model for independent multi-gate MOSFETs is presented. This industry standard compact model is called BSIM-IMG. The two independent (front- and back-gate) control of the channel charge in these [...]

InGaAs FinFET Modeling Using Industry Standard Compact Model BSIM-CMG

Chauhan Y.S., Duarte J.P., Gu J.J., Hu C., Khandelwal S., Paydavosi N., Si M., Ye P.D., University of California-Berkeley, US

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen [...]

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control

Chauhan Y.S., Hu C., Karim M.A., Khandelwal S., Niknejad A., Sachid A., Venugopalan S., Norwegian University of Science & Technlogy, NO

An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated [...]

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

Fjeldly T.A., Khandelwal S., NTNU, NO

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]

BSIM6: Symmetric Bulk MOSFET Model

Chauhan Y.S., Hu C., Karim M.A., Khandelwal S., Niknejad A., Venugopalan S., University of California-Berkeley, US

BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry etc. [...]

Effective Width Modeling for Body-Contacted Devices in Silicon-On-Insulator Technology

Khandelwal S., Shanbhag K., Tamilmani E., Watts J., IBM SRDC Bangalore, IN

Body-Contacted (BC) devices are extensively used in silicon-on-insulator analog circuits to avoid kink effect. This effect is not desirable as it changes gain of device suddenly. But to make body-contact special layout schemes are used. [...]