Zhang X., He J., Chan M., Du C., Ye Y., Zhao W., Wu W., Wang W.
PKU-HKUST Shenzhen-Hongkong Institution, CN
Keywords: analytic model, core-shell, cylindrical surrounding gate MOSFETs (SRGFETs), Pao-Sah’s dual integral, Poisson–Boltzmann equation
A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is first derived under the gradual channel approximation. The drain-current equation based on drift-diffusion mechanism is obtained from Pao- Sah’s dual integral, which is expressed as a function of intermediate vabible. The model is continuous both from sub-threshold to strong inversion region and from the linear to the saturation region. The model has been extensively verified by 3D numerical simulations with a wide range of geometrical parameters.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 483 - 486
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-1-4822-5827-1