A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is first derived under the gradual channel approximation. The drain-current equation based on drift-diffusion mechanism is obtained from Pao- Sah’s dual integral, which is expressed as a function of intermediate vabible. The model is continuous both from sub-threshold to strong inversion region and from the linear to the saturation region. The model has been extensively verified by 3D numerical simulations with a wide range of geometrical parameters.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 483 - 486
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling