Zhao W. – TechConnect Briefs

A New Method to Fin-width Line Edge Roughness Effect Simulation of FinFET Performance

Feng Z., He J., He P., Song L., Wang W., Wu W., Zhao W., Zhu Y., Peking University Shenzhen SOC Key Laboratory, CN

This paper developed a full three-dimensional (3-D) statistical simulation method to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic [...]

A Full Differential Charge Pump Based on Symmetrical Complementary Half-Current Circuit Architecture

Du C., Feng Z., He J., He P., Huang Q., Song L., Wang W., Wu W., Zhao W., Peking University Shenzhen SOC Key Laboratory, CN

A full differential charge pump with low current mismatch and deviation is designed in this paper based on the symmetric complementary half-current circuit architecture. It adopts two symmetrical complementary P-N replica circuits with half value [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Chan M., Du C., He J., He Q., Ma C., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation

He J., Liu Y., Wang W., Wu W., Ye Y., Zhang C., Zhao W., Peking University Shenzhen SOC Key Laboratory, CN

A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory [...]

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure

Chan M., Du C., He J., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is [...]

Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect

Chan M., Chen A., He J., Ye Y., Zhang A., Zhao W., Beijing University of Aeronautics and Astronautics, CN

Considering both two-dimensional and three-dimensional single wire above plate, the proposed method decomposes the electric field into various regions and gives solutions for each part. The total ground capacitance is the summation of all components. [...]

Compact Modeling of Signal Transients and Integrity Analysis for Dispersionless Interconnect

Zhao W., PKU HKUST Shenzhen Institution of IER., CN

In this paper, a compact model for transient response of the dispersionless interconnects is rigorously derived with resistive, inductive and capacitive load terminations. The proposed compact models are verified by the HSPICE simulation result to [...]

From Games and Films to Molecular Simulation and Design

Olguin C., Zhao W., Autodesk, Inc., US

Propelled by the multi-billion dollar game and film industries, CG software has evolved dramatically in sophistication. Effects range from realistic explosions to the chaotic movement driven by wind and other fluids. This paper describes our [...]