Ma C. – TechConnect Briefs

Compact Modeling of Long-Term MOSFET Degradation for Predicting Circuits Degradation

Miyamoto H., Ma C., Mattausch H.J., Miura-Mattausch M., Tanoue H., Tanimoto Y., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

[Introduction] Prediction methods of long-term degradation of both p- and n-type metal oxide semiconductor field effect transistors (MOSFETs) in CMOS circuits is proposed. During CMOS circuit degradation, not all the MOSFETs but only several MOSFETs [...]

Reliability-Aware Device Modeling and Implications on Circuit Aging Simulations

Zhang L., Ma C., Chan M., Hong Kong University of Science and Technology, HK

Device reliability and circuit aging are becoming key design concerns with advanced CMOS technologies. In the traditional way, a reliability model describing the device parameter shifts in the time domain is independent of a device [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Ma C., He J., He Q., Chan M., Du C., He J., He Q., Ye Y., Zhao W., Wu W., Zhang X., Wang W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability

He H., He J., Ma C., Wang C., Zhang A., He H., He J., Peking Univeristy, CN

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model [...]

Scalable Single Walled Carbon Nanotube Separation: from Process to Product

Fogden S., Kim K.C., Ma C., McFarlane G., Linde Electronics, US

The extraordinary electronic and optical properties of single walled carbon nanotubes (SWNTs) are determined by their structure; SWNTs are1 either metallic or semiconducting depending on their diameter and chirality . Many valuable applications in, for [...]

Compact Modeling of Dynamic Threshold Voltage of FinFET High K Gate Stack and Application in Circuit Simulation

He F., Ma C., Li B., Lin X., Zhang L., Zhang X., Zhang L., Zhang X., Lin X., SZPKU, CN

Compact modeling study of dynamic threshold voltage of FinFET high K gate stack is proposed in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN

A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

He J., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., Chan M., Peking University, CN

An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]

Diode Parameter Extraction by a Linear Cofactor Difference Operation Method

Ma C., Li B., Liu F., Chen Y., Zhang L., Zhang X., Liu F., Feng J., He J., Zhang L., Zhang X., Peking University, CN

The direct extraction of the key static parameters of a general diode by the new method named Linear Cofactor Difference Operator (LCDO) method has been carried out in this paper. From the developed LCDO method, [...]