RF-noise modeling in MOSFETs: excess noise, symmetry, and causality

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Modeling of RF-noise in MOSFET channels is one of the cornerstones for RF-CMOS-circuit design. Deep sub-micron technology nodes necessitate a proper treatment of excess noise as well as detailed modeling of parasitics. In addition, demanding circuit applications require advanced noise analysis methods (such as time-domain noise simulations). All of these put higher requirements on the models. In this paper, we present new 40-nm measurement data that reconfirms the accuracy and universality of our previously published noise model. Moreover, we show a generic method to implement RF-noise models in a circuit simulator, which is consistent with advanced noise analysis methods.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 503 - 507
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 978-1-4822-5827-1