TU Dresden – TechConnect Briefs

Flexible virtual source compact model for fast modeling of new channel materials and device architectures

The end of bulk silicon-based transistor technology has often been predicted in the scientific and technical literature. As a result, many new channel materials (such as III-V semiconductors, 2D materials, nanowires and -tubes) and device [...]

Trap-induced apparent linearity of CNTFETs (invited)

Haferlach M., Claus M., TU Dresden, DE

Compared to conventional bulk semiconductors carbon nanotubes (CNTs) possess a number of properties which may make CNT technology superior for certain applications. In particular, the one-dimensional (1D) transport in CNTs leads not only to a [...]

FreeNano – Test Methods for Release of Pigment-Nanoparticles Into the Environment at the End of Life Cycle

Stintz M., TU Dresden, DE

Several coatings with and without nanoscaled additives and pigments were exposed to artificial aging and weathering, before they experienced a mechanical treatment by sanding with process parameters similar to professional sanding condition. The miniature sanding [...]