NQS Modeling of independent DG MOSFET using RTA Approach

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We propose a new set of Relaxation Time Approximation (RTA) based Non Quasi Static (NQS) model for independent double gate MOSFETs by taking into account the fact that any gate can be the dominant gate. We model the NQS effect in independent double gate MOSFET with RTA based approach using piecewise linearization methodology. In this context we also report an anomalous frequency dependency of the inter-gate transcapcitances. It is shown that the proposed model is predicting both large and small signal device characteristics very accurately and can be used for most of the practical applications. Proposed models have been verified against TCAD simulation and also implemented in professional circuit simulator.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 479 - 482
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling
ISBN: 978-1-4822-5827-1