PKU-HKUST Shenzhen-Hongkong Institution

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Chan M., Du C., He J., He Q., Ma C., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure

Chan M., Du C., He J., Wang W., Wu W., Ye Y., Zhang X., Zhao W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is [...]

Application of Multi-frequency Test and Neural Network to Fault Diagnosis in Analog Circuits

Chan M., He J., Liang H-L, Mei J., Wang C., Wang H., Ye Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

In this paper, the multi-frequency test and neural networks (NNs) are applied to fault diagnosis in analog circuits. The reason is that multi-frequency test can maximize differences between the failure and the normal circuit’s response, [...]

Compact Modeling of Parameter Variations of Nanoscale CMOS due to Random Dopant Fluctuation

Cao Y., He H., He J., Mei J., Ye Y., Zhu Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the [...]

Junctionless Nanowire MOSFET with Dynamic Threshold Voltage Operation Methodology

Deng W., He J., Mei J., Wang H., Ye Y., Yu C., Zhang A., PKU-HKUST Shenzhen-Hongkong Institution, CN

In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology （DT-JNT） is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate [...]

Numerical Study on Gate-All-Around Tunneling FET with SiO2 Core and Si Shell Structure

Chan M., He H., He J., Mei J., Zhang A., Zhang L., Zhang X., PKU-HKUST Shenzhen-Hongkong Institution, CN

This work presents a gate-all-around tunneling FET based on SiO2 core and Si shell structure (GAA-SOI-TFET) and demonstrates its performance characteristics via the numerical simulation method. The 3-D T-CAD numerical simulations demonstrate that this new [...]

Analytic Model forAmorphous GST OTS in Phase Change Memory Cell with Hopping Transport

Cao Y., He J., Wang C., Wang H., Wang W., Ye Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

This paper presents an analytic model for amorphous GST OTS in phase-change-memory cell with the hopping transport mechanism, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability [...]

Active Pixel CMOS Image Sensor with Single Transistor Architecture

He J., Liang H., Su Y., Zhang A., Zhang D., Zhang G., PKU-HKUST Shenzhen-Hongkong Institution, CN

CMOS active pixel image sensor with single transistor architecture (1T CMOS APS) is proposed in this paper and verified by experiment data. By switching the photo sensing pinned diode, reset and select can be achieved [...]

A Numerical Study on THZ-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-effect Transistor

Cao Y., He H., He J., Mou X., Wang C., Ye Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

A numerical method is developed in this paper to simulate FET-based THz wave generation and detection. The method is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with [...]

Analog/RF Performance Analysis of Coaxial Carbon Nanotube MOSFET from non-Equilibrium Green’s Function Simulation

Cao Y., Che Y., Chen Q., He H., Liang H., Wang C., PKU-HKUST Shenzhen-Hongkong Institution, CN

the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details in this paper based on the non-equilibrium [...]