, Glinsner, T.
, Hingerl, K.
, Lindner, P.
, Mühlberger, M.
, Schöftner, R.
, EV Group, AT
UV-based Nanoimprint Lithography (UV-NIL) offers several decisive technical advantages concerning overlay alignment accuracy, simultaneous imprinting of micro- and nanostructures and tool design. A variety of potential applications has been demonstrated by using Nanoimprint Lithography (e.g. [...]
, Nemet, B.
, Oron, M.
, Oron, R.
, Shvartzer, R.
, KiloLambda Technologies Ltd., IL
We are taking advantage of the unique capabilities of nanoparticles guest embedded within dielectric host matrices for field enhancement effect in developing next generation of non-linear components and devices to passively control and regulate optical [...]
, Iazikov, D.
, McGinnis, B.
, Mossberg, T.W.
, Ticknor, A.
, LightSmyth Technologies, US
Recent advances in deep ultra-violet (DUV) photolithographic patterning tools have enabled the scribing of essentially arbitrary diffractive structures with feature sizes even below 100 nm that can be precision-placed to within a few nanometers in [...]
Since the observation of photoluminescence from porous Si, nanocrystalline Si and Ge have extensively been studied because it would open a possibility for indirect-gap semiconductors for optoelectronic applications. Nayfeh et al. reported ultraviolet (UV) detectors [...]
A key barrier to wide-scale integration of functional nanowires in devices and systems is the difficulty in forming reproducible and efficient contacts to them. Unlike the research-based approach of sequentially connecting electrodes to individual nanowires [...]
In this work, we investigated the effect of Si pre-implantation on the low energy B implant and boron activation enhancement during the post-implant annealing process using KMC. For investigating Si pre implantation effect, Si implantation [...]
The dynamics for the effect of X-ray flux on periodic lattice distortion waves in YBCO (YBa2Cu3O7-d) 50nm films on STO *SrTiO3) is described: The X-ray flux r(t)=photons/s can induce many possible resonant excitations between states, [...]
We show the relationship between the property of field electron emission, the area of patterned CNTs bundle, and the density of CNTs bundle. The current density can reach as high as 20 mA/cm2 at about [...]
In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model [...]
, Chen, C.
, Dokmeci, M.R.
, Makaram, P.
, Selvarasah, S.
, Northeastern University, US
Single Walled Carbon Nanotubes (SWNTs) with their superior electrical and mechanical properties are very strong candidates for future electronic applications. CMOS electronics are constantly being scaled down to accommodate more devices. Alternative device geometries are [...]
Embedded static random access memory (SRAM) that constitutes an integral part of nanoelectronic systems, experiences two major challenges with aggressive technology scaling: 1) exponential increase in leakage current  and 2) decrease in robustness of [...]
From all the experiments carried above, Photonic crystal, so far has shown to have a very promising future and it is assumed that in the next decades new technologies would be seen. It is estimated [...]
, Chang, Y-T.
, Chen, C-Y
, Chen, C.C.
, Lee, S-C
, Tsai, M-W
, Tung, I-C
, National Taiwan University, TW
Extraordinary transmission through Al/Si structure perforated with random distribution of holes. The (1, 0) Al/Si surface plasmon mode due to hole array with 1st nearest neighbor distance. The transmission peak intensity is found to depend [...]
Though generally perceived as unfertile grounds for nano-technology optics, silica-based Planar Lightwave Circuits (PLCs) are benefiting from the tools, metrology and methods being developed for nanometer-resolution technology. We shall review how some of these methods [...]
The physics of standing waves has been explored for more than 50 years. Standing wave fields can be used to selectively enhance luminescence or enhance the Raman signal. We explore here the optical standing wave [...]
The use of charge storage on nanoscale particles has been realized in silicon integrated circuit memories [1,2] and utilized in commercial products. An analysis has previously been made of the increasing portion of the threshold [...]
This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. [...]
, Mulla, I.S.
, Ostroverkhova, O.
, Pillai, V.K.
, Valmikanathan, O.P.
, Oregon Nanoscience & Microtechnologies Institute, US
We report the synthesis of palladium (Pd)/polycarbonate (PC) nanocomposites as well as their morphological, thermal, optical and electrical properties. Pd nanoclusters were produced by the reduction of palladium chloride using a variation of the Brust’s [...]
We propose a more robust and design-adaptive nanofabric crossbar PLA architecture and associated test methodology to enance the yield and minimize the time complexity for configuration. It is tested for different sizes and defect rate [...]
At present, a rubbing process using a fabric is the only technique adopted in the LC display industry to treat PI film surfaces for the mass-production of flat-panel LC display devices. However, this process has [...]
, Jung, Y.K.
, Kang, I.-N.
, Kong, H.Y.
, Lim, E.
, Park, M.-J.
, Shim, H.-K.
, Yi, M.H.
, KAIST, KR
We have synthesized fluorene-based copolymers (PF-HT-TT-TH and PF-TH-TT-HT) containing thiophene moieties having different position of alkyl side chain via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weight (Mn)s of PF-HT-TT-TH and PF-TH-TT-HT were respectively [...]
This study presents a nanometer-scale Integrate and Fire Spike (IFS) neuron cell using vertically-grown, undoped silicon nano-wire transistors. The design cycle starts with determining individual metal gate work functions for each NMOS and PMOS transistor [...]
, Fallah, B.
, Jamei, M.
, Karbassian, F.
, Koohsorkhi, J.
, Mohajerzadeh, S.
, Robertson, M.D.
, Yuill, S.
, Acadia University, CA
A novel approach for the fabrication of light-emitting diodes based on nano-porous silicon films is reported. The objective of this work was the creation of an efficient light emitter based on existing silicon technologies in [...]
We use Contact Block Reduction (CBR)method to investigate the critical issues relating optimization of device performance in 10 nm FinFET operating in ballistic regime. The goal of this work is to achieve the desired values [...]
A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of [...]
, Huang, H.M.
, Hwang, C-H
, Li, Y.
, Yu, S-M.
, National Chaio Tung University, TW
Scaling of silicon production technology has approached the sub-65nm regime. Device’s electrical characteristics fluctuate according to the discreteness and randomness of dopants in sub-32nm technologies. In this paper, we investigate the random-dopant-induced electrical characteristics fluctuations, [...]
Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving the high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar [...]
An analysis has previously been made of the increasing portion of the threshold voltage being occupied by thermal noise levels and the bit error rates in digital logic and memory circuits [2-4]. This analysis has [...]
, Campbell, S.A.
, Ding, Y.
, Kortshagen, U.
, Song, S.H.
, University of Minnesota, US
A novel process has been developed by when large (~40 nm) cubic single crystals of silicon can be produced at high rates. In a previous paper we demonstrated that these particles can be used to [...]
A general methodology for the determination of the nature of the interfacial interactions is proposed by investigating the changes of the organic/metal bond critical parameters as consequences of both increasing the size and changing the [...]
Magnetotunnel junctions (MTJs), exhibiting high tunneling magnetoresistance (TMR), are currently being employed in new generations of hard disk drive (HDD) read heads and novel magnetic random access memory (MRAM) technology. We have modeled such spintronic [...]
We carried out the calculations for the single carrier energy levels, and the optical transitions of these structures, with taking into account the effects resulting in change of the electron effective mass due to the [...]
In this paper we address the robust design of the quantum potential profile in a in semiconductor nanodevice to achieve a desired electron transmission coefficient vs. bias voltage characteristic despite uncertainty. We formulate an optimization [...]
we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are [...]
We used a first-principle atomistic scale method, based on density functional theory and non-equilibrium Green’s function to study the electron tunneling current through ultra thin silicon oxide films. The Si/SiO2 model interface has been constructed [...]
Quantum computation is a new technology with the potential for providing exponential parallelism, but a quantum computation is a series of quantum logic gates. This work uses the DSP 6711 to simulate the different quantum [...]
In this paper, we will present a Monte Carlo method based algorithm established for a sample nanoelectronics device. We are assuming that at the nanoscale level like at the highest the thermal phenomena are important [...]
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices