We carried out the calculations for the single carrier energy levels, and the optical transitions of these structures, with taking into account the effects resulting in change of the electron effective mass due to the GaAs/Al0.3Ga0.7As quantum ring (QR) and concentric double quantum rings (DQR) geometry transformation. We applied a single sub-band 3D model for GaAs QD/QR with the energy dependence of the electron effective mass. Our prediction for the electron effective mass of the DQR ground state is 0.077m0, which is 13% greater than the bulk value of 0.067m0. The effects of small variations of the geometrical profile on the electron energies of the quantum structures were also studied.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 212 - 215
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices