Silicon Nanoparticles contacted by metal nanogaps for FET applications

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A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of application of nanoparticles in FET applications. Therefor the silicon substrate was used as kind of “gate electrode”. Modulation of conductance of the nc-Si could be attained. Measurements showed reasonable turn-off characteristics and ON/OFF-current ratios. Because of no requirement of a semiconductor substrate in principle and free alignment , design of circuits is possible at all.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 185 - 188
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topicss: Nanoelectronics, Photonic Materials & Devices
ISBN: 1-4200-6182-8