Arizona State University – TechConnect Briefs

Electrochemical Nanoimprinting of Silicon: A Direct Patterning Approach

Azeredo, B., Arizona State University, US

Soft-lithography and nanoimprinting lithography have been critical in manufacturing 3D features with sub-20 nm resolution onto polymeric materials which have often been employed for producing micro and nanoscale optical materials and surfaces. However, methods for [...]

Wear-resistant coatings for solar cell panels

Song, K., Arizona State University, US

This research studied the relationship between nano-particle orientation and wear resistance. Nano-particle orientations were tailored through flow-assisted spray technical and parallel, randomly distributed, and preferentially vertical configurations were achieved. Surface damage tests were managed using [...]

Self-healing and self-cleaning nanocomposite coatings

Song, K., Arizona State University, US

This work reports on the healing of translucency, roughness, nanoindents, and shallow scratches in polymer/nano-particle composites. Mechanical loading were applied on polymer/self-healing additive/nano-particle composites. The concentration of nano-particles and self-healing additives were optimized to 1.0 [...]

Biofilm as a versatile stablizer and promoter for Pd nanoparticle (PdNP) recovery and catalytic denitrification

Krajmalnik-Brown, R., Ontiveros-Valencia, A., Rittmann, B.E., Wang, Z., Zhou, C., Arizona State University, US

There is an increasing demand on recycling of palladium from mining waste streams for purposes of resource retrieval and catalytic application. We introduced the novel H2-based membrane biofilm reactor (MBfR) technology to recover Pd in [...]

Continuous Flow Real-Time Pcr Platform for High Throughput Environmental Monitoring

Chao, S-H, Hatch, A., Lintecum, K., Ray, T., Youngbull, C., Arizona State University, US

We present the design and development of a continuous flow quantitative Polymerase Chain Reaction system, suitable for multi-analyte, high-throughput, semi-autonomous assays. This system operates in a continuous fashion and is able to detect many different [...]

Drift Velocity Calculation in Si Using an Analytical Model for the Phonon Dispersion

Gada, M., Goodnick, S.M., Raleva, K., Vasileska, D., Arizona State University, US

It is well known that crystalline silicon is the material of choice for fabrication of integrated circuits because silicon wafers are cheap and silicon dioxide is abundant in nature. Properties of the crystalline silicon have [...]

Importance of the Collisional Broadening of the States across MOSFET Technology Generations

Kannan, G., Vasileska, D., Arizona State University, US

There are two assumptions made in the derivation of the Fermi’s Golden Rule: (1) it is assumed that the scattering is infrequent which allows us to impose the long time limit and arrive at the [...]

Current Degradation due to electromechanical coupling in GaN HEMT’s

Goodnick, S.M., Padmanabhan, B., Vasileska, D., Arizona State University, US

The major reliability concern in GaN HEMT technology is the current degradation due to electromechanical coupling.Electromechanical coupling is the change in the piezoelectric polarization charge in the device with the application of bias. A theoretical [...]

The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs

Goodnick, S.M., Padmanabhan, B., Vasileska, D., Arizona State University, US

we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

Ashraf, N., Vasileska, D., Arizona State University, US

Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.