This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. For example, in long-channel FET like structures, we observed a threshold voltage shift (Vt) of 1 V for 10V/10s stress pulse. Our preliminary data suggest: (i) faster ‘Write’ time and (ii) longer retention time for these devices as compared to conventional Si nanocrystal gate nonvolatile memories reported in the literature.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 156 - 157
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices