Stokbro K. – TechConnect Briefs

Bottom-up device simulations: modeling electrical currents on the atomic scale

Blom A., Stokbro K., QuantumWise A/S, DK

As device features approach atomic dimensions, simulations of electrical currents need to be based on a quantum-mechanical description of the system. New phenomena then appear which can be exploited for novel device functionality, but also [...]

First-principles Modeling of Magnetic Memory Components — Preliminary Results on the Effects of Interface Oxides

Stilling M., Stokbro K., Flensberg K., Atomistix, DK

Magnetotunnel junctions (MTJs), exhibiting high tunneling magnetoresistance (TMR), are currently being employed in new generations of hard disk drive (HDD) read heads and novel magnetic random access memory (MRAM) technology. We have modeled such spintronic [...]

Crystalline Magnetotunnel Junctions: Fe-MgO-Fe, Fe-FeOMgO-Fe and Fe-AuMgOAu-Fe

Stilling M., Stokbro K., Flensberg K., Copenhagen University, DK

The dimension of electronic devices is rapidly scaling down, and the ratio between surface and bulk atoms therefore increasing. This has the consequence that the interfaces between different parts of the device start to have [...]

TranSIESTA: A SPICE for Molecular Electronics

Stokbro K., Taylor J., Brandbyge M., Ordejon P., Technical University of Denmark, DK

With our newly developed method,TranSIESTA[1], it has become possible to model complex molecular electronics devices under operation conditions. In this presentation I will describe the basic principles behind the method and applications of the method [...]