Fabrication of Light Emitting Diodes Using Nano-Porous Silicon Thin Films

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A novel approach for the fabrication of light-emitting diodes based on nano-porous silicon films is reported. The objective of this work was the creation of an efficient light emitter based on existing silicon technologies in order to advance the integration of photonics and electronics on a single silicon substrate. The nano-crystallization of an amorphous silicon film was achieved by means of a sequential hydrogenation and de-hydrogenation process leading to the formation of a three-dimensional nano-porous structure with grain diameters ranging between 2 and 10 nm. This technique does not need an ion implantation step, nor uses anodic etching, and is compatible with existing silicon manufacturing technologies. The crystalline quality and morphology of the layers after the hydrogen treatment was assessed by SEM and TEM, and cathodoluminescence spectroscopy was used to characterize the optical properties. Cathodoluminescence spectra displayed peaks in the blue, green and red regions of the visible spectrum and the peak emission could be controlled by the processing parameters. In addition, electroluminescence was observed in a light emitting diode fabricated using a MOS-like structure. Characterization of the electroluminescence behavior and fabrication of LEDs on glass substrates using RF-PECVD is currently being investigated.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 177 - 180
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 1-4200-6182-8