Inha University – TechConnect Briefs

Numerical Study on a passive micromixer with sinusoidal channel walls

Afzal A., Kim K-Y, Inha University, KR

Mixing of liquid samples in microfluidic systems has attracted many researchers mainly due to small characteristic dimensions of these channels, absence of turbulence and small diffusion coefficients. Depending on the mode of operation, different realizations [...]

Size dependent photoluminescence characteristics of GaN nanoparticles

Chen Y., Kang K.S., Jyoti N., Kim J., Inha University, KR

Various size of GaN nanoparticles have been fabricated with sol-gel method using Ga(NO3)3 as a presusor, HNO3 as a solvent, NH3OH as a pH adjusting agent, and citric acid as a chelating agent. After adding [...]

Kinetic Monte Carlo Study on Carbon Trapping Effect with Pre-amorphized Silicon

Park S., Cho B., Won T., Inha University, KR

We report our kinetic Monte Carlo (kMC) study of the effect of carbon co-implant on the pre-amorphization implant (PAI) process. We employed BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant [...]

A Study on Numerical Analysis of Stress Distribution for Thermal Nanoimprint Lithography Process

Cho B-G, Won T., Inha University, KR

We investigated the deformation of the viscoelastic polymethyl methacrylene (PMMA) resist wherein a rigid SiO2 stamp with a rectangular line pattern is imprinted for thermal nano-imprint lithography (NIL). We calculated the stress distribution in the [...]

Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon Substrate

Park S.Y., Cho B-G, Won T., Inha University, KR

We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant [...]

Numerical Stress Analysis on Thermal Nano-Imprint Lithography

Cho B-G, Park S.Y., Won T., Inha University, KR

This paper investigations the stress distribution of the polymer through numerical simulations during thermal NIL. Numerical results explained characteristic phenomena which never appear in continuous line-and-space patterning cases. We believe that numerical simulations with more [...]

Ab-initio Calculations of Uniaxially and Biaxially Tensile Stress Effect

Kim Y.K., Park S.Y., Won T., Inha University, KR

In this paper, we present an ab-initio study on energy configurations, minimum energy path (MEP), and migra-tion energy for neutral indium diffusion in a uniaxial and biaxial tensile strained {100} silicon layer for the first [...]

Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

Kim H-G, Kim J-S, Kim Y.K., Yoon K-S, Kim H-G, Kim J-S, Kim Y.K., Kim H-G, Kim J-S, Kim Y.K., Won T., Inha University, KR

We report our KMC study on the effect of strain on B diffusion in silicon and relaxed SiGe layer by assuming a virtual strained structure with charged defect energy and diffusivity. The simulation results imply [...]

First-Principles Study on Indium Diffusion in Silicon Substrate under Hydrostatic Strain

Yoon K-S, Kim Y.K., Won T., Inha University, KR

In this paper, we studied the effect of strain on indium diffusion. In order to investigate the stress effect, it is essential to find out the migration path of indium. Ab-initio study in this work [...]

Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor

Kim H-G, Inha University, KR

we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are [...]