In this work, we investigated the effect of Si pre-implantation on the low energy B implant and boron activation enhancement during the post-implant annealing process using KMC. For investigating Si pre implantation effect, Si implantation is performed with dosage of 3 x 1014 /cm2 and with implantation energy of 200 keV. Further, B implantation is performed with dosage of 4.5 x 1015/cm2 and implantation energy 2 keV, followed by annealing process is performed at 790 C for 18 sec.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 115 - 118
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices