Theoretical study of Graphene Nanoribbon Field-Effect Transistors

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In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model is investigated. 5nm wide CNR MOSFETs show comparable performance with 1.6 nm diameter CNT MOSFETs, and outperform silicon MOSFETs by over 100%.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Pages: 127 - 130
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 1-4200-6182-8