This paper presents novel BEM for particle transport in microfluidic channels. Code performance and simulation results are presented
This paper presents a novel high-stability algorithm for the simulation of the electromechanical actuation of electrostatic MEMS devices. Its stability improves on that of voltage- and charge-drive algorithms. It further offers a purely electrical simulation [...]
We present a high-level model of a dual gimbaled mass gyroscope, which provides an accurate physical description of the impact of external and internal disturbances on the output signal, but which also allows for the [...]
We present advances in designing and modeling complex microsystems at the network/system-level. For design, we develop a graphical user interface that allows users to quickly configure complex systems in 3D using a computer mouse or [...]
We present a new topology for planar microwave transmission line: bulk titanium waveguide. The waveguide is formed by deep trench etching, dielectric gap filling, and planarization. The high aspect ratio of the resulting structure provide [...]
A method is presented in which surface topography characterization is combined with the electrical measurement of the contact mechanics under electrostatic loading. Contact characteristics such as the surface separation versus the applied pressure, and the [...]
The optimization of design parameters and methods for electrostatic voltage sensors based on torsional actuators is presented. The analytical software model used for this optimization process is discussed and compared to measurement results. Voltage excitation [...]
This work documents and explains a counter-intuitive nonlinear phenomenon, where the laser-detected resonant motion of forced, micromechanical oscillators can be tuned from softening to hardening by increasing the laser power incident on a prestressed silicon [...]
The main goal of this paper is to present in detail the design and operation of an ASIC, which will be used in the research aimed at the development of a real time temperature monitoring [...]
Two-dimensional transient analyses of field-plate GaN MESFETs and AlGaN/GaN HEMTs with a semi-insulating buffer layer have been performed in which a deep donor and a deep acceptor are considered in the buffer layer. Quasi-pulsed I-V [...]
We have developed the first self-consistent thermal electron-phonon simulator which solves the Boltzmann transport equation for the electrons and the energy balance equations for phonons, and as such allows us to make realistic estimates on [...]
An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows [...]
ASCOMP has developed a new fully automatized version for microfluidics applications in bio-devices, using the IST (Immersed surfaces Technique) technique to map complex components/geometries into a simple rectangular Cartesian grid. Near wall regions are treated [...]
This work attempts to predict the sensitivity of the 0.25-um NMOS transistor characteristics and parameters to selected manufacturing process steps. The transistor is on the 0.25um line of production in STMicroelectronics. The methdology uses two-dimensional [...]
A homogeneous residual layer thickness in nanoimprint lithography (NIL) can be achieved by optimizing the NIL stamp geometry (the distribution of cavities and protrusions, the stamp cavities depth and the stamp thickness) as well as [...]
A novel design of a micropump with multiple vibrating membranes has been developed in this study. The micropump consists of three nozzle/diffuser elements with vibrating membranes, which are used to create pressure difference in the [...]
This paper introduces a computationally efficient numerical modeling approach for microdroplet motion on an innovative Digital Microfluidic Multiplexer structure which enables the pilot synthesis and study of nanoparticles. This structure offers an enhanced level of [...]
Inertial sensors have been extensively utilized in science and industry. For high G (>300G) applications, reaction times for conventional mechanical type shock sensors are not fast enough. In some cases the shock sensor structures disintegrate(>5000G). [...]
In this paper we present a process planning and optimization tool which can be linked to commercially available EDA tools. The increasing variety of available fabrication technologies and materials for microtechnological devices make the design [...]
Voids in silicon are used for gettering transition metals and may be used to detect point defect injection. High energy implants can create a separation between vacancies and interstitials making a vacancy rich region near [...]
Intermixing at heterointerfaces and the broadening of the SiGe layer in SiGe/Si super-lattice (SL) structures can be detrimental to device performance. Thus it is important to develop predictive model for interdiffusion in SL structures. In [...]
We report on a series of experiments in which a strained Si0.95Ge0.05 layer 600Å thick was oxidized along with relaxed SiGe layers and Si samples. In this work, we observed that the oxidation rate of [...]
We propose a physics-based model for the Ge diffusivity in SiGe and empirically fit the model to previously reported experimental results. The self-diffusivity of Ge can be given by: DGe=D0*exp(Sx)*exp(-E/kT) where x is the Ge [...]
The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower [...]
An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact [...]
An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]
We propose a new dual gate trench power MOSFET with strained Si channel that not only provides lower on resistance than the conventional trench MOSFET but also enables the in-circuit configurability of its characteristics for [...]
To overcome miniaturization roadblock, innovative architectural enhancements involving the use of an improved SOI like architecture called Silicon On Nothing (SON) capable of SCE and DIBL suppression onto the existing ISE devices , has been [...]
HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]
A formal verification approach for MEMS based embedded systems is presented. The methodology is demonstrated on an adaptive cruise control (ACC) system for the motion control of a platoon of cars. The system consists of [...]
In this paper, an optimization technique (so-called the geometric programming) is employed to optimize the base doping and Ge-dose for SiGe HBTs with high cut-off frequency and base-collector current gain. This work first formulates Kroemer’s [...]
, Buchaillot L.
, Delaye M.T.
, Driot N.
, Dufour R.
, Fontaine H.
, Hentz S.
, Kacem N.
, Legrand B.
, Nguyen V.
, Robert P.
, CEA, FR
In order to compensate the loss of performances when scaling sensors down to NEMS, a process, characterization methods and above all an original analytical model including main sources of nonlinearities are presented. The permanent quest [...]
A novel MEMS-based microsystem including microneedle array with a self-actuated structure for fluid sampling and drug delivery is modeled, designed and simulated. The self-actuating mechanism and the microneedle array are able to be fabricated on [...]
The goal of this project was the experimental characterization and modeling of capacitive micromachined ultrasound transducers (cMUTs). The cMUTs being tested are fabricated using layers common to standard commercial CMOS processes. Two designs of micromachined [...]
This paper presents design, fabrication and characterization of miniaturized one-axis single crystal solid-state accelerometers with Nanometer Stress Concentration Region (NSCR) on piezoresistive sensing elements utilizing MEMS bulk micromachining techniques and design, simulation of new sub-millimeter [...]
This paper provides simulation results for a constant-charge biasing IC for capacitive RF MEMS switches to drastically improve reliability. It is well known that there are some forefront issues for RF MEMS switches to be [...]
This paper proposes a novel method to switch a widely studied bistable micromechanism. Most researches utilize on-substrate thermomechanical actuators to actuate the fully compliant tensural bistable mechanisms, while others integrate comb-drive actuators to snap between [...]
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation