We have developed the first self-consistent thermal electron-phonon simulator which solves the Boltzmann transport equation for the electrons and the energy balance equations for phonons, and as such allows us to make realistic estimates on the on-current degradation in FD-SOI devices with SIO2 and high-k dielectrics as gate oxides. For the first time we present a detailed study on the influence of lattice heating on the on-current for different generations of FD-SOI devices. Non-scationary transport (velocity overshoot) present in the smallest structures being investigated is responsible for the smaller thermal degradation in the smallest geometry device structures being considered.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 537 - 540
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation