In order to compensate the loss of performances when scaling sensors down to NEMS, a process, characterization methods and above all an original analytical model including main sources of nonlinearities are presented. The permanent quest for cost cuts has led to the use of potential “In-IC” compatible thin SOI-based technologies, which imposes drastic size reduction of the sensors. Combined with the need of in-plane actuation for fabrication and design simplicity, this implies a large reduction in detectability. Moreover nonlinearities occur proportionally sooner for small structures which reduce their dynamic range predicted using linear models. The idea is to find physical conditions in order to maximise the signal variations and to push the limits of the linear behavior.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 619 - 622
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation