Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor

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HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may produce non-linear distortion and thus degrade the S/N ratio of the system. For short gate HEMTs, the transconductance and output conductance become important sources of non-linearity. Thus, the device structure needs to be tailored to improve the RF performance of devices used in the system. In this work, linearity performance of Dual Material Gate (DMG) HEMT is studied and the results compared with the conventional Single Metal Gate (SMG) HEMT using ATLAS device simulator. Thus, by using DMG architecture, we can minimize the linearity degradation and improve the RF performance of the AlGaN/GaN HEMT.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 607 - 610
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4200-8505-1