Kosina H. – TechConnect Briefs

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

Kernstock C., Karner M., Baumgartner O., Gehring A., Holzer S., Kosina H., Global TCAD Solutions, AT

An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows [...]

Adaptive Energy Integration of Non-Equilibrium Green’s Function

Baumgartner O., Karner M., Holzer S., Pourfath M., Grasser T., Kosina H., TU Wien, AT

Within the non-equilibrium Green's function formalism numerical integration plays an important role. Several adaptive integration methods were realized and compared regarding convergency within a self-consistent Schrödinger-Poisson loop, computation time and memory consumption.

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

Pourfath M., Gehring A., Cheong B.H., Park W.J., Kosina H., Selberherr S., Vienna University of Technology, AT

Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively [...]

Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

Entner R., Gehring A., Kosina H., Grasser T., Selberherr S., TU Vienna, AT

In this work a new approach for modeling gate leakage currents for memory cells which are highly degraded is proposed. In thicker dielectrics which are subject to high field stress and can therefore have a [...]

A Physically-Based Electron Mobility Model for Strained Si Devices

Dhar S., Kosina H., Palankovski V., Ungersboeck E., Selberherr S., TU Vienna, AT

A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, [...]

Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering

Kosina H., Nedjalkov M., Selberherr S., Institute for Microelectronics, TU Vienna, AT

A Quantum Monte Carlo (QMC) method taking into account both interference and dissipation effects is presented. The method solves the space-dependent Wigner equation which includes semi-classical scattering via the Boltzmann collision operator. The classical force [...]

Authors: Kosina H.

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

Adaptive Energy Integration of Non-Equilibrium Green’s Function

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

A Physically-Based Electron Mobility Model for Strained Si Devices

Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

An Impact Ionization Model Including an Explicit Cold Carrier Population

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation