Goodnick S.M. – TechConnect Briefs

Drift Velocity Calculation in Si Using an Analytical Model for the Phonon Dispersion

Gada M., Vasileska D., Raleva K., Goodnick S.M., Arizona State University, US

It is well known that crystalline silicon is the material of choice for fabrication of integrated circuits because silicon wafers are cheap and silicon dioxide is abundant in nature. Properties of the crystalline silicon have [...]

Current Degradation due to electromechanical coupling in GaN HEMT’s

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

The major reliability concern in GaN HEMT technology is the current degradation due to electromechanical coupling.Electromechanical coupling is the change in the piezoelectric polarization charge in the device with the application of bias. A theoretical [...]

The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.

Self – Heating Effects in Nanowire Transistors

Hossain A., Raleva K., Vasileska D., Goodnick S.M., Arizona State University, US

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic [...]

First self-consistent thermal electron- phonon simulator

Vasileska D., Raleva K., Goodnick S.M., Arizona State University, US

We have developed the first self-consistent thermal electron-phonon simulator which solves the Boltzmann transport equation for the electrons and the energy balance equations for phonons, and as such allows us to make realistic estimates on [...]

Mobility of Electrons in Rectangular Si Nanowires

Ramayya E., Vasileska D., Goodnick S.M., Knezevic I., Arizona State University, US

We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field [...]

Integrated Techniques for Transmembrane Protein Sensing

Wilk S.J., Petrossian L., Goryll M., Thornton T.J., Goodnick S.M., Tang J.M., Eisenberg R.S., Arizona State University, US

We present a method for the microfabrication of apertures in a silicon substrate using well-known cleanroom technologies and a novel approach using phase sensitive detection to measure single channels of transmembrane proteins. These proteins are [...]

Microfabricated Silicon Apertures for Ion Channel Measurement

Wilk S.J., Goryll M., Petrossian L., Laws G.M., Goodnick S.M., Thornton T.J., Saraniti M., Tang J.M., Eisenberg R.S., Arizona State University, US

Ion channels are proteins that act as pores in cell membranes and allow only specific ions to pass through the cell wall. Here, we present a method for microfabrication of apertures in a silicon substrate [...]

Full-band Particle-based Simulation of Germanium-On-Insulator FETs

Beysserie S., Branlard J., Aboud S., Goodnick S.M., Thornton T., Saraniti M., Illinois Institute of Technology, US

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high [...]

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

Wigger S., Saraniti M., Goodnick S.M., Leitenstorfer A., Arizona State University, US

Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between [...]