Papers:
Fast Methods for Particle Dynamics in Dielectrophoretic and Oscillatory Flow Biochips
This paper presents novel BEM for particle transport in microfluidic channels. Code performance and simulation results are presented
High-Stability Numerical Algorithm for the Simulation of Deformable Electrostatic MEMS Devices
This paper presents a novel high-stability algorithm for the simulation of the electromechanical actuation of electrostatic MEMS devices. Its stability improves on that of voltage- and charge-drive algorithms. It further offers a purely electrical simulation [...]
Physically-Based High-Level System Model of a MEMS-Gyroscope for the Efficient Design of Control Algorithms
We present a high-level model of a dual gimbaled mass gyroscope, which provides an accurate physical description of the impact of external and internal disturbances on the output signal, but which also allows for the [...]
Towards an efficient multidisciplinary system-level framework for designing and modeling complex engineered microsystems
We present advances in designing and modeling complex microsystems at the network/system-level. For design, we develop a graphical user interface that allows users to quickly configure complex systems in 3D using a computer mouse or [...]
Bulk-Titanium Waveguide – a New Building Block for Microwave Planar Circuits
We present a new topology for planar microwave transmission line: bulk titanium waveguide. The waveguide is formed by deep trench etching, dielectric gap filling, and planarization. The high aspect ratio of the resulting structure provide [...]
The static behavior of RF MEMS capacitive switches in contact
Suy H.M.R., Herfst R.W., Steeneken P.G., Stulemeijer J., Bielen J.A., NXP Semiconductors Research, NL
A method is presented in which surface topography characterization is combined with the electrical measurement of the contact mechanics under electrostatic loading. Contact characteristics such as the surface separation versus the applied pressure, and the [...]
Modeling and Design of Electrostatic Voltage Sensors Based on Micromachined Torsional Actuators
Dittmer A., Dittmer J., Dittmer A., Dittmer J., Judaschke R., Büttgenbach S., Technische Universität Braunschweig, DE
The optimization of design parameters and methods for electrostatic voltage sensors based on torsional actuators is presented. The analytical software model used for this optimization process is discussed and compared to measurement results. Voltage excitation [...]
Anomalous Thermomechanical Softening-Hardening Transitions in Micro-oscillators
This work documents and explains a counter-intuitive nonlinear phenomenon, where the laser-detected resonant motion of forced, micromechanical oscillators can be tuned from softening to hardening by increasing the laser power incident on a prestressed silicon [...]
Test ASIC for Real Time Estimation of Chip Temperature
The main goal of this paper is to present in detail the design and operation of an ASIC, which will be used in the research aimed at the development of a real time temperature monitoring [...]
Simulation of Field-Plate Effects on Lag and Current Collapse in GaN-based FETs
Two-dimensional transient analyses of field-plate GaN MESFETs and AlGaN/GaN HEMTs with a semi-insulating buffer layer have been performed in which a deep donor and a deep acceptor are considered in the buffer layer. Quasi-pulsed I-V [...]
First self-consistent thermal electron- phonon simulator
We have developed the first self-consistent thermal electron-phonon simulator which solves the Boltzmann transport equation for the electrons and the energy balance equations for phonons, and as such allows us to make realistic estimates on [...]
Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs
Kernstock C., Karner M., Baumgartner O., Gehring A., Holzer S., Kosina H., Global TCAD Solutions, AT
An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows [...]
The Immersed Surfaces Technology for Reliable and Fast Setup of Microfluidics Simulation Problems
ASCOMP has developed a new fully automatized version for microfluidics applications in bio-devices, using the IST (Immersed surfaces Technique) technique to map complex components/geometries into a simple rectangular Cartesian grid. Near wall regions are treated [...]
Process Sensitivity Analysis of a 0.25-um NMOS Transistor Using Two-Dimensional Simulations
This work attempts to predict the sensitivity of the 0.25-um NMOS transistor characteristics and parameters to selected manufacturing process steps. The transistor is on the 0.25um line of production in STMicroelectronics. The methdology uses two-dimensional [...]
The IMPRINT software: quantitative prediction of process parameters for successful nanoimprint lithography
A homogeneous residual layer thickness in nanoimprint lithography (NIL) can be achieved by optimizing the NIL stamp geometry (the distribution of cavities and protrusions, the stamp cavities depth and the stamp thickness) as well as [...]
Design and Simulations of a Microfluidic Pump with Multiple Vibrating Membranes
A novel design of a micropump with multiple vibrating membranes has been developed in this study. The micropump consists of three nozzle/diffuser elements with vibrating membranes, which are used to create pressure difference in the [...]
Numerical Modeling of Microdrop Motion on Digital Microfluidic Multiplexer
This paper introduces a computationally efficient numerical modeling approach for microdroplet motion on an innovative Digital Microfluidic Multiplexer structure which enables the pilot synthesis and study of nanoparticles. This structure offers an enhanced level of [...]
Finite Element Analysis of a MEMS-Based High G Inertial Shock Sensor
Inertial sensors have been extensively utilized in science and industry. For high G (>300G) applications, reaction times for conventional mechanical type shock sensors are not fast enough. In some cases the shock sensor structures disintegrate(>5000G). [...]
Design for Manufacturing integrated with EDA Tools
In this paper we present a process planning and optimization tool which can be linked to commercially available EDA tools. The increasing variety of available fabrication technologies and materials for microtechnological devices make the design [...]
Modeling Voids in Silicon
Voids in silicon are used for gettering transition metals and may be used to detect point defect injection. High energy implants can create a separation between vacancies and interstitials making a vacancy rich region near [...]
Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Super Lattice Structures
Intermixing at heterointerfaces and the broadening of the SiGe layer in SiGe/Si super-lattice (SL) structures can be detrimental to device performance. Thus it is important to develop predictive model for interdiffusion in SL structures. In [...]
Effect of Strain on the Oxidation Rate of Silicon Germanium Alloys
We report on a series of experiments in which a strained Si0.95Ge0.05 layer 600Å thick was oxidized along with relaxed SiGe layers and Si samples. In this work, we observed that the oxidation rate of [...]
A Physics-Based Empirical Model for Ge Self Diffusion in Silicon Germanium Alloys
We propose a physics-based model for the Ge diffusivity in SiGe and empirically fit the model to previously reported experimental results. The self-diffusivity of Ge can be given by: DGe=D0*exp(Sx)*exp(-E/kT) where x is the Ge [...]
Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools
Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN
The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower [...]
A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOSFETs
An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact [...]
Diode Parameter Extraction by a Linear Cofactor Difference Operation Method
Ma C., Li B., Liu F., Chen Y., Zhang L., Zhang X., Liu F., Feng J., He J., Zhang L., Zhang X., Peking University, CN
The direct extraction of the key static parameters of a general diode by the new method named Linear Cofactor Difference Operator (LCDO) method has been carried out in this paper. From the developed LCDO method, [...]
A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs
An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]
A Novel Dual Gate Strained-Silicon Channel Trench Power MOSFET For Improved Performance
We propose a new dual gate trench power MOSFET with strained Si channel that not only provides lower on resistance than the conventional trench MOSFET but also enables the in-circuit configurability of its characteristics for [...]
Pre-Distortion Assessment of Workfunction Engineered Multilayer Dielectric Design of DMG ISE SON MOSFET
To overcome miniaturization roadblock, innovative architectural enhancements involving the use of an improved SOI like architecture called Silicon On Nothing (SON) capable of SCE and DIBL suppression onto the existing ISE devices [2], has been [...]
Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor
Kumar S.P., Agrawal A., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Device Research Laboratory, IN
HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]
High-Frequency Characteristic Optimization of Heterojunction Bipolar Transistors
In this paper, an optimization technique (so-called the geometric programming) is employed to optimize the base doping and Ge-dose for SiGe HBTs with high cut-off frequency and base-collector current gain. This work first formulates Kroemer’s [...]
From MEMS to NEMS: Modelling and characterization of the non linear dynamics of resonators, a way to enhance the dynamic range
Kacem N., Hentz S., Fontaine H., Nguyen V., Delaye M.T., Blanc H., Robert P., Legrand B., Buchaillot L., Driot N., Dufour R., CEA, FR
In order to compensate the loss of performances when scaling sensors down to NEMS, a process, characterization methods and above all an original analytical model including main sources of nonlinearities are presented. The permanent quest [...]
Modeling and simulation of a monolithic self-actuated microsystem for fluid sampling and drug delivery
A novel MEMS-based microsystem including microneedle array with a self-actuated structure for fluid sampling and drug delivery is modeled, designed and simulated. The self-actuating mechanism and the microneedle array are able to be fabricated on [...]
Modeling and Simulation of New Structures for Sub-millimeter Solid-state Accelerometers with Piezoresistive Sensing Elements
This paper presents design, fabrication and characterization of miniaturized one-axis single crystal solid-state accelerometers with Nanometer Stress Concentration Region (NSCR) on piezoresistive sensing elements utilizing MEMS bulk micromachining techniques and design, simulation of new sub-millimeter [...]
Simulation of Constant-Charge Biasing Integrated Circuit for High Reliability Capacitive RF MEMS Switch
This paper provides simulation results for a constant-charge biasing IC for capacitive RF MEMS switches to drastically improve reliability. It is well known that there are some forefront issues for RF MEMS switches to be [...]
Vibration-Actuated Bistable Micromechanism for Microassembly
This paper proposes a novel method to switch a widely studied bistable micromechanism. Most researches utilize on-substrate thermomechanical actuators to actuate the fully compliant tensural bistable mechanisms, while others integrate comb-drive actuators to snap between [...]
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4200-8505-1