TechConnect Proceedings Papers
Month: May 2005
A Compact Physical Model for Critical Quantum Mechanical Effects On MOSFET
As the MOSFET is scaled down to sub-100nm range, two quantum mechanical effects (QME) of the energy quantization and the electron tunneling though the gate oxide become critical. A new compact physical model for QME [...]
SPICE Modeling of Multiple Correlated Electrical Effects of Dopant Fluctuations
Lee Y.M., Watts J., Grundon S., Cook D., Howard J., IBM Semiconductor Research and Developement Center, US
We proposed a new methodology capable of accurately modeling the partial correlations and geometric dependency in the local random fluctuations of various electrical parameters. This method incorporates principal factor analysis (PFA) into the conventional SPICE-based [...]
An A Priori Hysteresis Modeling Methodology for Improved Efficiency and Model Accuracy in Advanced PD SOI Technologies
Chen Q., Goo J-S, Subba N., Cai X., An J.X., Ly T., Wu Z-Y, Suryagandh S., Thuruthiyil C., Radwin M., Zamudio L., Yonemura J., Assad F., Pelella M.M., Icel A.B., Advanced Micro Devices, US
Exploiting the asymmetric nature of interactions among hysteresis, “nonFET”, and DC characteristics, an a priori hysteresis modeling methodology has been proposed as an essential part of an improved model extraction flow for advanced PD SOI [...]
The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs
Sadachika N., Yusoff M.Md., Uetsuji Y., Bhuyan M.H., Kitamaru D., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Weiss L., Feldmann U., Baba S., Graduate School of Advanced Sciences of Matter, Hiroshima University, JP
Fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is developed. HiSIM-SOI solves surface potentials at all three SOI-surfaces along the depth direction self-consistently. Besides comparison to measured I-V characteristics, the model is verified with 1/f noise [...]
RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction
In this paper, the BSIMSOI RF model for FDSOI MOSFET is introduced and verified. Self-heating effect plays an important role in RF S-parameter fitting and the thermal resistance needs to be correctly extracted. A new [...]
Unified Regional Charge-based MOSFET Model Calibration
See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG
This paper presents a methodology to extract device physical parameters, i.e., electrical oxide thickness (tox), channel doping (Nch), and poly-gate doping (Ngate), as well as smoothing parameters in our unified regional charge-based model [1] with [...]
One-Iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current Model
Chiah S.B., Zhou X., Chandrasekaran K., See G.H., Shangguan W., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG
This paper presents calibration approach for our unified length/width-dependent MOSFET drain current (Ids) model [1] with the length/width-dependent threshold voltage (Vt) model [2] for technology characterization in the entire geometry/bias range for CMOS shallow trench [...]
Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio
Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR
This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical [...]
Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio
Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR
This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio [...]