A Compact Model to Predict Quantized Sub-Band Energy Levels and Inversion Layer Centroid of MOSFET with Parabolic Potential Well Approximation

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A novel analytical model to predict the sub-band energy levels and inversion charge centroid in MOS surface inversion layer with the parabolic potential well approximation has been presented in this paper. Based on coupled solution of Schrodinger equation and Poisson equation from WKB method and the parabolic potential well approximation, one transcendental equation of sub-band energy level has been rigorously derived and then the approximate analytical solutions for the subband energy levels and inversion charge centroid have been obtained. From our analysis, the effects of the substrate doping concentration and energy level number on the inversion centroid is predicted and one parameter meaning in the effective field expression is elucidated. Analytical results are compared with the previous numerical analysis and good agreement is found.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 171 - 174
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0