Feldmann U. – TechConnect Briefs

HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX

Miura-Mattausch M., Kikuchihara H., Feldmann U., Nakagawa T., Miyake M., Iizuka T., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP

The Silicon-On-Thin-Buried-Oxide (SOTB) transistor is a descendant of the conventional SOI MOSFET with thin Silicon and BOX layers. Many different structure and material variations are possible, where the choice of a thicker BOX may be [...]

Modeling of Chain History Effect based on HiSIM-SOI

Fukunaga Y., Miyake M., Toda A., Kikuchihara K., Baba S., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect [...]

Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type

Miura-Mattausch M., Miyake M., Kikuchihara H., Feldmann U., Amakawa S., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP

Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. [...]

HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications

Oritsuki Y., Yokomiti M., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range [...]

The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs

Sadachika N., Yusoff M.Md., Uetsuji Y., Bhuyan M.H., Kitamaru D., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Weiss L., Feldmann U., Baba S., Graduate School of Advanced Sciences of Matter, Hiroshima University, JP

Fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is developed. HiSIM-SOI solves surface potentials at all three SOI-surfaces along the depth direction self-consistently. Besides comparison to measured I-V characteristics, the model is verified with 1/f noise [...]