Papers – Page 6 – TechConnect Briefs

Analog Design Tool based on the ACM model

Galup-Montoro C., Schneider M.C., dos Reis Machado C., Universidade Federal de Santa Catarina, BR

This paper presents MOSVIEW, a software tool for transistor-level analog design, which is based on the Advanced Compact MOSFET (ACM) model [1, 2], derived from physics. This tool allows rapid exploration of the design space. [...]

All-Region MOS Model of Mismatch due to Random Dopant Placement

Klimach H., Galup-Montoro C., Schneider M.C., Universidade Federal de Santa Catarina, BR

Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. A model for MOS [...]

Optimized Threshold-Voltage MOS Transistor Compact Model from the 4-Component Theory

Jie B.B., Sah C-T, University of Florida, US

Based on Sah's 1996 four-component exact formula, a new optimized compact model is derived for long channel MOS transistors. This new model covers subthreshold and linear operation ranges using four independent optimization voltage parameters in [...]

Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories

Larcher L., Pavan P., Università di Modena e Reggio Emilia, IT

The purpose of this paper is to illustrate a physically-based model allowing the statistical simulations of oxide leakage currents in MOS transistors and Floating Gate memories. This model computes the leakage current through defects randomly [...]

Compact Modeling of Four-Terminal Junction Field-Effect Transistors

Liou J., University of Central Florida, US

This paper presents a physics -based compact model for a four terminal (independent top and bottom gates) junction field-effect transistor (JFET). The model describes the JFET’s dc and ac characteristics with a high degree of [...]

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

Niu G., Auburn University, US

This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö [...]

Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors

Tran H., University of Technology Dresden, DE

This paper presents the derivation of a two- and threedimensional (2D/3D) generalized Integral-Charge Control Relation (GICCR) that is based on an exact physical relation for the transfer current of bipolar transistors. The resulting compact equation [...]

Compact Modelling of High-Voltage LDMOS Devices

Aarts A.C.T., van der Hout R., van Langevelde R., van der Hout R., van Langevelde R., Scholten A.J., Willemsen M.B., Klaassen D.B.M., Philips Research Laboratories, NE

In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances [...]

Modeling FET Variation Within a Chip as a Function of Circuit Design and Layout Choices

Watts J., Lu N., Bittner C., Grundon S., Oppold J., IBM, US

In addition to the overall range of circuit characteristics expected from process variation the circuit designer needs to know how closely different circuit element will track one another. We describe a new methodology for modeling [...]

A Study of Figures of Merit for the High Frequency Behavior of MOSFETs in RF IC Applications

Cheng Y., Siliconlinx, US

This paper is to review important device parameters as the figures of merit (FOM) to understand the device characteristics for analog/RF applications. These FOM should be characterized and evaluated in technology development and model generation [...]