This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio (gm/ID) characteristic of the MOSFET in the linear region, from weak to moderate inversion. For the extraction of both the effective channel length and width, the gm/ID characteristic is determined for several devices of different mask channel lengths and widths, respectively.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 135 - 138
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications