One-Iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current Model

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This paper presents calibration approach for our unified length/width-dependent MOSFET drain current (Ids) model [1] with the length/width-dependent threshold voltage (Vt) model [2] for technology characterization in the entire geometry/bias range for CMOS shallow trench isolation (STI) transistors. The model has been formulated with built-in physical effects to account for short-channel/ narrow-width effects while maintaining Gummel symmetry [3]. Through a one-iteration parameter extraction, the model can predict accurately the experimental data from a 0.11-_m CMOS STI technology wafer.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 143 - 146
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0